Photoemission study from Si and GaAs using a spatially varying vector potential

Abstract

Photoemission calculations in the case of semiconductors like gallium arsenide (GaAs) and silicon (Si) using a spatially dependent vector potential is presented here. The logarthmic dielectric model of Gurung and Thapa is used for the calculation of vector potential. The vector potential thus de-veloped is used for the calculation of photocurrent for which Kronig-Penney potential has been used to define the crystal potential from which the initial state wave-function for the surface state is derived.