1. Pachhunga University College IR
  2. Science Stream
  3. Department of Physics
  4. Dr. Lalhriatzuala
  5. Journal
Please use this identifier to cite or link to this item: http://pucir.inflibnet.ac.in:8080/jspui/handle/123456789/696
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dc.contributor.authorLalhriatzuala-
dc.date.accessioned2024-06-14T06:16:39Z-
dc.date.available2024-06-14T06:16:39Z-
dc.date.issued2023-04-30-
dc.identifier.urihttp://pucir.inflibnet.ac.in:8080/jspui/handle/123456789/696-
dc.description.abstractCdSe is a direct band gap II–VI compound semiconductor, which can exist in both zinc blende phase and wurtzite phase. Its direct band gap of 1.7 eV divides the solar spectrum into two parts, namely, the “thermal” part with ℎ] < 𝐸 𝑔 and the “optical” one with ℎ] > 𝐸 𝑔, both parts with practically equal radiation energy.en_US
dc.language.isoen_USen_US
dc.titleStructural, Optical and Electrical Characterization of CdSe Nanorods Synthesized by Solvothermal Processen_US
dc.typeOtheren_US
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