Giant Intrinsic Magnetoresistance in Spin-Filtered Tunnel Junctions with Ferrimagnetic Electrode

Abstract

Magnetic tunnel junctions (MTJs) have garnered signi cant research attention in recent years due to their crucial role in the development of spintronics as they have a wide range of potential applications, including read-head sensors, nonvolatile memory devices such as STT MRAM and SOT MRAM, and nonvolatile logic and logic-in-memory computing.1,2 However, designing magnetic materials that meet the requirements for highperformance spintronic devices, such as high spin polarization, high Curie temperature, low magnetic moment, and high tunneling magnetoresistance (TMR) ratio, is challenging due to the ine ciency of spin injection3{6. In the past two decades, signi cant advancements have been made in identifying material properties that optimize the design of spintronic devices beyond conventional magnetic tunnel diodes and transistors7{14. For example, spin-gapless semiconductors and half-metallic magnets have been incorporated into magnetic tunnel diode and transistor concepts, resulting in a substantial improvement in TMR ratio10,15. The use of ferromagnetic electrodes, such as Fe and Co, has enabled symmetric ltering, leading to improved TMR ratio.9 However, compensated antiferromagnetic materials are currently preferred over ferromagnetic electrodes due to their faster information processing, robustness against perturbing magnetic elds, and spin-momentum coupling.